Transistors - Bipolar (BJT) - Single IC(MAX) 1.5A | Transistors

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Found: 610

2SB09680RL

TRANS PNP 40V 1.5A U-G2

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: U-G2
- Power - Max: 10W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 150MHz
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2SC4027T-H

TRANS NPN 160V 1.5A TP

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 120MHz
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2N7051_D10Z

TRANS NPN DARL 100V 1.5A TO92-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 200nA
- Frequency - Transition: 200MHz
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KSC2883YTF

SMALL SIGNAL BIPOLAR TRANSISTOR

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 120MHz
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KSD985OSTU

TRANS NPN DARL 60V 1.5A TO126-3

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
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SS8550-C-BP

TRANS PNP 25V 1.5A TO92

Micro Commercial Co
- Manufacturer: Micro Commercial Co
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 190MHz
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2N7051

TRANS NPN DARL 100V 1.5A TO92-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 200nA
- Frequency - Transition: 200MHz
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BCP51

TRANS PNP 45V 1.5A SOT223-4

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-4
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
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KSA1304YTU

TRANS PNP 150V 1.5A TO220F-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
- Power - Max: 20W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 4MHz
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FMMT722QTA

SS LOW SAT TRANSISTOR SOT23 T&R

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 625mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 200MHz
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KSA940

POWER BIPOLAR TRANSISTOR, PNP

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.5W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 4MHz
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2SA1552T-TL-E

TRANS PNP 160V 1.5A TP-FA

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TP-FA
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 120MHz
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TPC6503(TE85L,F,M)

TRANS NPN 30V 1.5A VS-6

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Series: U-MOSVII
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: VS-6 (2.9x2.8)
- Power - Max: 1.6W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
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TN6705A

TRANS NPN 45V 1.5A TO226-3

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-226-3
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
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QSX7TR

TRANS 2NPN 12V 1.5A 6TSMT

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
- Power - Max: 500mW
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 400MHz
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