• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/396
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 200°C (TJ)
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: Toshiba Semiconductor and Storage
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: PW-MOLD2
• Power - Max: 1.1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 285V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: Rohm Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 3-SMD, Flat Leads
• Supplier Device Package: TUMT3
• Power - Max: 400mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 280MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-4
• Power - Max: 1W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 110V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 10nA (ICBO)
• Frequency - Transition: 150MHz

• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 100MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 4mA, 1A
• Current - Collector Cutoff (Max): 50nA (ICBO)

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F
• Power - Max: 20W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 150V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• Frequency - Transition: 4MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 1W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8000 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-CPH
• Power - Max: 1.2W
• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 225mV @ 15mA, 750mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 500MHz

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/396
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 200°C (TJ)
• Package / Case: TO-206AB, TO-46-3 Metal Can
• Supplier Device Package: TO-46 (TO-206AB)
• Power - Max: 500mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Micro Commercial Co
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Power - Max: 625mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 100MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-71
• Supplier Device Package: 3-NMP
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 160V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 120MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-4
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz