• Manufacturer: onsemi
• Series: SWITCHMODE™
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.4W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
• Frequency - Transition: 10MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz

• Manufacturer: STMicroelectronics
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 850mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: TO-251
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
• Current - Collector Cutoff (Max): 500µA
• Frequency - Transition: 5MHz

• Manufacturer: WeEn Semiconductors
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 2.1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
• Current - Collector Cutoff (Max): 100µA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 20W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
• Frequency - Transition: 4MHz

• Manufacturer: Harris Corporation
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5AA
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 55V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 4V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 10mA, 200mA
• Current - Collector Cutoff (Max): 5µA (ICBO)

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: SOT-32-3
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2V, 150MA
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Microsemi Corporation
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-206AB, TO-46-3 Metal Can
• Supplier Device Package: TO-46-3
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: PowerDI™ 5
• Supplier Device Package: PowerDI™ 5
• Power - Max: 3.2W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 120V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 150MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Cropped Leads
• Supplier Device Package: TO-220-3
• Power - Max: 25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 150V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• Frequency - Transition: 4MHz

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• Power - Max: 1.5W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 120V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/396
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100µA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223 (TO-261)
• Power - Max: 1.5W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Frequency - Transition: 50MHz