• Manufacturer: Yangzhou Yangjie Electronic Technology Co.,Ltd
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Power - Max: 300mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 100MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-CP
• Power - Max: 900mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 225mV @ 15mA, 750mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 500MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: PCP
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 160V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 120MHz

• Manufacturer: Rohm Semiconductor
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: ATV
• Supplier Device Package: ATV
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 160V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 50MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• Power - Max: 25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 150V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• Frequency - Transition: 4MHz

• Manufacturer: STMicroelectronics
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3
• Power - Max: 1.4W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 20W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 800V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 750mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• Frequency - Transition: 15MHz

• Manufacturer: Rohm Semiconductor
• Series: Automotive, AEC-Q101
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 300MHz

• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 200°C (TJ)
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: STMicroelectronics
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3
• Power - Max: 1.4W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 1mA
• Frequency - Transition: 50MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/395
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 4-SMD, No Lead
• Supplier Device Package: UB
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-3
• Supplier Device Package: SOT-223-3
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)