- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Operating Temperature
|
Supplier Device Package
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2N3725 TIN/LEAD | TRANS NPN 50V 1.2A TO39 | Central Semiconductor Corp | TO-205AD, TO-39-3 Metal Can | 1.2A | 50V | 800mW | Through Hole | NPN | -65°C ~ 200°C (TJ) | TO-39 | 950mV @ 100mA, 1A | 10µA | 60 @ 100mA, 1V | 300MHz |
MPSA14D26Z | TRANS NPN DARL 30V 1.2A TO92-3 | Fairchild Semiconductor | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 1.2A | 30V | 625mW | Through Hole | NPN - Darlington | -55°C ~ 150°C (TJ) | TO-92-3 | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 125MHz |
MPSA65_D27Z | TRANS PNP DARL 30V 1.2A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 1.2A | 30V | 625mW | Through Hole | PNP - Darlington | -55°C ~ 150°C (TJ) | TO-92-3 | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 100MHz |
MMBTA64 | TRANS PNP DARL 30V 1.2A SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 1.2A | 30V | 350mW | Surface Mount | PNP - Darlington | -55°C ~ 150°C (TJ) | SOT-23-3 | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 125MHz |
TN6718A | TRANS NPN 100V 1.2A TO226-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 1.2A | 100V | 1W | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-226-3 | 500mV @ 10mA, 250mA | 100nA (ICBO) | 50 @ 250mA, 1V | |
TN6725A_D75Z | TRANS NPN DARL 50V 1.2A TO226 | onsemi | TO-226-3, TO-92-3 Long Body (Formed Leads) | 1.2A | 50V | 1W | Through Hole | NPN - Darlington | -55°C ~ 150°C (TJ) | TO-226 | 1.5V @ 2mA, 1A | 100nA (ICBO) | 4000 @ 1A, 5V | |
2N6426_D74Z | TRANS NPN DARL 40V 1.2A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 1.2A | 40V | 625mW | Through Hole | NPN - Darlington | -55°C ~ 150°C (TJ) | TO-92-3 | 1.5V @ 500µA, 500mA | 1µA | 20000 @ 500mA, 5V | |
MPSA13_D75Z | TRANS NPN DARL 30V 1.2A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 1.2A | 30V | 625mW | Through Hole | NPN - Darlington | -55°C ~ 150°C (TJ) | TO-92-3 | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 125MHz |
KSA1220AYS | TRANS PNP 160V 1.2A TO126 | onsemi | TO-225AA, TO-126-3 | 1.2A | 160V | 1.2W | Through Hole | PNP | 150°C (TJ) | TO-126 | 700mV @ 200mA, 1A | 1µA (ICBO) | 160 @ 300mA, 5V | 175MHz |
BC517_D26Z | TRANS NPN DARL 30V 1.2A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 1.2A | 30V | 625mW | Through Hole | NPN - Darlington | -55°C ~ 150°C (TJ) | TO-92-3 | 1V @ 100µA, 100mA | 100nA (ICBO) | 30000 @ 20mA, 2V | |
BCP52 | TRANS PNP 60V 1.2A SOT223-4 | onsemi | TO-261-4, TO-261AA | 1.2A | 60V | 1.5W | Surface Mount | PNP | -55°C ~ 150°C (TJ) | SOT-223-4 | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | |
MPSA63_D74Z | TRANS PNP DARL 30V 1.2A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 1.2A | 30V | 625mW | Through Hole | PNP - Darlington | -55°C ~ 150°C (TJ) | TO-92-3 | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 125MHz |
MMBTA13 | TRANS NPN DARL 30V 1.2A SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 1.2A | 30V | 350mW | Surface Mount | NPN - Darlington | -55°C ~ 150°C (TJ) | SOT-23-3 | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 125MHz |
MPSW3725 | TRANS NPN 40V 1.2A TO226-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 1.2A | 40V | 1W | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-226-3 | 950mV @ 100mA, 1A | 100nA (ICBO) | 60 @ 100mA, 1V | 250MHz |
MPSW3725 | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 1.2A | 40V | 1W | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-226-3 | 950mV @ 100mA, 1A | 100nA (ICBO) | 60 @ 100mA, 1V | 250MHz |
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