• Manufacturer: Fairchild Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: SuperSOT™-6
• Power - Max: 700mW
• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 1.25MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Central Semiconductor Corp
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: Die
• Supplier Device Package: Die
• Power - Max: 800mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 10µA
• Frequency - Transition: 300MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-3
• Supplier Device Package: SOT-223-3
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-4
• Power - Max: 1.5W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 350mW
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 125MHz

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-226-3
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 350mW
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 125MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 350mW
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 220MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.2W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 120V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 175MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-226-3
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 350mW
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 220MHz