Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 500mA package TO-236AB

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 23
  • PDTB143ETVL
    TRANS PREBIAS PNP 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 140MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PDTB114ETR
    TRANS PREBIAS PNP 0.46W
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 140MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
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  • PDTD143ETVL
    TRANS PREBIAS NPN 0.425W
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 225MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
    Info from the market
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  • PDTB113ET,215
    TRANS PREBIAS PNP 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
    Info from the market
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  • PDTD114ETVL
    TRANS PREBIAS NPN 0.425W
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 225MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
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  • PDTB123YT,215
    TRANS PREBIAS PNP 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
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  • PDTB143XTVL
    TRANS PREBIAS PNP 0.46W
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 140MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
    • Total warehouses:
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    • Offers with a price:
    • Offers in stock:
  • PDTD143ETR
    TRANS PREBIAS NPN 0.425W
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 225MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
    Info from the market
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  • PDTB123TT,215
    TRANS PREBIAS PNP 250MW TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    Info from the market
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  • PDTD113ZT,215
    TRANS PREBIAS NPN 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
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  • PDTB123ET,215
    TRANS PREBIAS PNP 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
    Info from the market
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  • PDTD113ET,215
    TRANS PREBIAS NPN 250MW TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
    Info from the market
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    • Offers in stock:
  • PDTD123TT,215
    TRANS PREBIAS NPN 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    Info from the market
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    • Offers in stock:
  • PDTD143XTVL
    TRANS PREBIAS NPN 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 225MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • PDTD143XTR
    TRANS PREBIAS NPN 0.425W
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 225MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
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  • 50
  • 100