Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 500mA package SPT

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 6
  • DTB113ZSTP
    TRANS PREBIAS PNP 300MW SPT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: SC-72 Formed Leads
    • Supplier Device Package: SPT
    • Power - Max: 300mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • DTB143ESTP
    TRANS PREBIAS PNP 300MW SPT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: SC-72 Formed Leads
    • Supplier Device Package: SPT
    • Power - Max: 300mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • DTD114ESTP
    TRANS PREBIAS NPN 300MW SPT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: SC-72 Formed Leads
    • Supplier Device Package: SPT
    • Power - Max: 300mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • DTD123TSTP
    TRANS PREBIAS NPN 300MW SPT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: SC-72 Formed Leads
    • Supplier Device Package: SPT
    • Power - Max: 300mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
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  • DTB123ESTP
    TRANS PREBIAS PNP 300MW SPT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: SC-72 Formed Leads
    • Supplier Device Package: SPT
    • Power - Max: 300mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
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  • DTB113ESTP
    TRANS PREBIAS PNP 300MW SPT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: SC-72 Formed Leads
    • Supplier Device Package: SPT
    • Power - Max: 300mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
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