Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 600mA package SOT-363

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 4
  • DRDNB26W-7
    TRANS PREBIAS NPN/DIODE SOT363
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SOT-363
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 220Ohms
    • Resistor - Emitter Base (R2): 4.7kOhms
    Info from the market
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  • DRDNB16W-7
    TRANS PREBIAS NPN/DIODE SOT363
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SOT-363
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
    • Total warehouses:
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    • Offers in stock:
  • DRDPB16W-7
    TRANS PREBIAS PNP 0.2W SOT363
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SOT-363
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
    • Total warehouses:
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    • Offers in stock:
  • DRDPB26W-7
    TRANS PREBIAS PNP 0.2W SOT363
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SOT-363
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 220Ohms
    • Resistor - Emitter Base (R2): 4.7kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
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  • 50
  • 100