Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 150mA package SC-88/SC70-6/SOT-363

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 4
  • NSVTB60BDW1T1G
    TRANS NPN/PNP COMBO SC88-6
    onsemi
    • Manufacturer: onsemi
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SC-88/SC70-6/SOT-363
    • Power - Max: 250mW
    • Transistor Type: 1 NPN Pre-Biased, 1 PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • NSTB60BDW1T1G
    TRANS PREBIAS 1NPN 1PNP 50V SC88
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SC-88/SC70-6/SOT-363
    • Power - Max: 250mW
    • Transistor Type: 1 NPN Pre-Biased, 1 PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 140MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • NSTB60BDW1T1
    TRANS NPN PREBIAS/PNP SOT363
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SC-88/SC70-6/SOT-363
    • Power - Max: 250mW
    • Transistor Type: 1 NPN Pre-Biased, 1 PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 140MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • NSTB60BDW1T1
    SMALL SIGNAL BIPOLAR TRANSISTOR
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SC-88/SC70-6/SOT-363
    • Power - Max: 250mW
    • Transistor Type: 1 NPN Pre-Biased, 1 PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 140MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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