Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased package PG-SOT363-PO

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 72
  • BCR148SH6433XTMA1
    TRANS 2NPN PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 100MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • BCR35PNE6327BTSA1
    TRANS NPN/PNP PREBIAS SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • BCR 116S H6727
    TRANS 2NPN PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • BCR198SH6327XTSA1
    TRANS 2PNP PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 190MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • BCR198SH6827XTSA1
    TRANS 2PNP PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 190MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • BCR22PNE6327BTSA1
    TRANS NPN/PNP PREBIAS SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 130MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • BCR129SE6327HTSA1
    TRANS 2NPN PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 10kOhms
    Info from the market
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  • BCR48PNH6433XTMA1
    TRANS NPN/PNP PREBIAS SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 70mA, 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 100MHz, 200MHz
    • Resistor - Base (R1): 47kOhms, 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • BCR135SE6327BTSA1
    TRANS 2NPN PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • BCR119SH6327XTSA1
    TRANS 2NPN PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 4.7kOhms
    Info from the market
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  • BCR35PNE6433HTMA1
    TRANS NPN/PNP PREBIAS SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • BCR35PNH6433XTMA1
    TRANS NPN/PNP PREBIAS SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • BCR148SH6327XTSA1
    TRANS 2NPN PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 100MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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    • Offers with a price:
    • Offers in stock:
  • BCR198SE6327BTSA1
    TRANS 2PNP PREBIAS 0.25W SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 190MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • BCR22PNE6433HTMA1
    TRANS NPN/PNP PREBIAS SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Frequency - Transition: 130MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • 10
  • 15
  • 50
  • 100