Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased package PG-SOT363-6-1

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 3
  • BCR10PNH6730
    BIPOLAR DIGITAL TRANSISTOR
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-6-1
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 130MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • BCR119S
    SMALL SIGNAL BIPOLAR TRANSISTOR
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-6-1
    • Power - Max: 250mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 4.7kOhms
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  • BCR08PNH6433XTMA1
    PRE-BIASED BIPOLAR TRANSISTOR (B
    Cypress Semiconductor Corp
    • Manufacturer: Cypress Semiconductor Corp
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-6-1
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 170MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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