- Supplier Device Package
- Manufacturer
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Transistor Type
-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
| Partnumber | Description | Manufacturer
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Supplier Device Package
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Resistor - Emitter Base (R2)
|
Package / Case
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BCR183S | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 250mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 30 @ 5mA, 5V | 200MHz | 10kOhms | SC-59, SOT-23-3, TO-236-3 |
| BCR166E6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | PG-SOT23-3-11 | 4.7kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 70 @ 5mA, 5V | 160MHz | 47kOhms | TO-236-3, SC-59, SOT-23-3 |
| BCR 129 E6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 120 @ 5mA, 5V | 150MHz | TO-236-3, SC-59, SOT-23-3 | |
| BCR135TE6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 70 @ 5mA, 5V | 150MHz | 47kOhms | TO-236-3, SC-59, SOT-23-3 |
| BCR129E6327 | BCR129 - DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 120 @ 5mA, 5V | 150MHz | TO-236-3, SC-59, SOT-23-3 | |
| BCR129SE6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 250mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 120 @ 5mA, 5V | 150MHz | SC-59, SOT-23-3, TO-236-3 | |
| BCR135E6433 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 70 @ 5mA, 5V | 150MHz | 47kOhms | TO-236-3, SC-59, SOT-23-3 |
| BCR196E6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 70mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | PG-SOT23-3-11 | 47kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 50 @ 5mA, 5V | 150MHz | 22kOhms | TO-236-3, SC-59, SOT-23-3 |
| BCR133TE6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 30 @ 5mA, 5V | 130MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
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