Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased package MPT3

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 2
  • DTDG14GPT100
    TRANS PREBIAS NPN 2W MPT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-243AA
    • Supplier Device Package: MPT3
    • Power - Max: 2W
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 80MHz
    • Resistor - Emitter Base (R2): 10kOhms
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  • DTDG23YPT100
    TRANS PREBIAS NPN 1.5W MPT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-243AA
    • Supplier Device Package: MPT3
    • Power - Max: 1.5W
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 22kOhms
    Info from the market
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  • 10
  • 15
  • 50
  • 100