Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 600mA package MINI6-G1

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 3
  • XN0F26300L
    TRANS PREBIAS DUAL NPN MINI6
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6
    • Supplier Device Package: MINI6-G1
    • Power - Max: 300mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 50mV @ 2.5mA, 50mA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 270Ohms
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  • XN0F26100L
    TRANS PREBIAS DUAL NPN MINI6
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6
    • Supplier Device Package: MINI6-G1
    • Power - Max: 300mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 3.3kOhms
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  • XN0F25600L
    TRANS PREBIAS DUAL NPN MINI6
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6
    • Supplier Device Package: MINI6-G1
    • Power - Max: 300mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
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  • 10
  • 15
  • 50
  • 100