Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 500mA package Mini3-G3-B
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- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 2.2kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 3.1 kOhms
- Resistor - Emitter Base (R2): 4.6 kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 270Ohms
- Resistor - Emitter Base (R2): 5 kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 10kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 2.2kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 10kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100