Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased package Mini3-G1

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 47
  • UNR211900L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNR221800L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 510Ohms
    • Resistor - Emitter Base (R2): 5.1kOhms
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  • UNR221500L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 10kOhms
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  • UNR211N00L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • UNR221L00L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • UNR221M00L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • UNR211100L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNR221400L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • UNR211500L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 10kOhms
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  • UNR222200L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • UNR211V00L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1.5mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
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  • UNR222600L
    TRANS PREBIAS NPN 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
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  • UNR211H00L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNR211800L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 510Ohms
    • Resistor - Emitter Base (R2): 5.1kOhms
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    • Offers with a price:
    • Offers in stock:
  • UNR212400L
    TRANS PREBIAS PNP 200MW MINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: Mini3-G1
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • 15
  • 50
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