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List Table
Found: 114
Partnumber Description Manufacturer
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Transistor Type
Supplier Device Package
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Resistor - Emitter Base (R2)
Package / Case
Series
RN2963FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 200MHz 22kOhms SOT-563, SOT-666
RN2968FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN2905FE,LF(CT TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 2.2kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN2966FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN1901FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 500nA 30 @ 10mA, 5V 250MHz 4.7kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN2911FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-563, SOT-666
RN2907FE,LF(CT TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN4911,LF(CT PNP + NPN BRT Q1BSR4.7KOHM Q1BER Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz, 250MHz SOT-563, SOT-666
RN1971FE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 250MHz SOT-563, SOT-666
RN4902FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 500nA 50 @ 10mA, 5V 200MHz, 250MHz 10kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN2906FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN4902FE(TE85L,F) TRANS NPN/PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 50 @ 10mA, 5V 200MHz 10kOhms SOT-563, SOT-666
RN2967FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666
RN1906FE(T5L,F,T) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-563, SOT-666
RN2901FE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 30 @ 10mA, 5V 200MHz 4.7kOhms SOT-563, SOT-666
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