Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 30mA package EMT5

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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Found: 1
  • EML17T2R
    TRANS PREBIAS PNP 0.12W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 120mW
    • Transistor Type: PNP - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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