Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased package EMT5

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 15
  • EMA8T2R
    TRANS PREBIAS DUAL PNP EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 300mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EML17T2R
    TRANS PREBIAS PNP 0.12W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 120mW
    • Transistor Type: PNP - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EMA3T2R
    TRANS 2PNP PREBIAS 0.15W
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 4.7kOhms
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  • EMA4T2R
    TRANS 2PNP PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 10kOhms
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  • EMG2T2R
    TRANS 2NPN PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EMG11T2R
    TRANS 2NPN PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EMG8T2R
    TRANS 2NPN PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EMG1T2R
    TRANS 2NPN PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • EMA2T2R
    TRANS 2PNP PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EMA5T2R
    TRANS 2PNP PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EMA11T2R
    TRANS 2PNP PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EMG5T2R
    TRANS 2NPN PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • EMG6T2R
    TRANS 2NPN PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 47kOhms
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  • EMG9T2R
    TRANS 2NPN PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • EMG4T2R
    TRANS 2NPN PREBIAS 0.15W EMT5
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD (5 Leads), Flat Lead
    • Supplier Device Package: EMT5
    • Power - Max: 150mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 10kOhms
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