Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased package DFN1110D-3

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 36
  • PDTA124XQBZ
    PDTA124XQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA124EQBZ
    PDTA124EQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • PDTA114YQBZ
    PDTA114YQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA144EQBZ
    PDTA144EQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA123JQBZ
    PDTA123JQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTC143EQB-QZ
    PDTC143EQB-Q/SOT8015/DFN1110D-
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 230MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PDTA114YQB-QZ
    PDTA114YQB-Q/SOT8015/DFN1110D-
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA143XQBZ
    PDTA143XQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTA143EQBZ
    PDTA143EQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PDTC124XQB-QZ
    PDTC124XQB-Q/SOT8015/DFN1110D-
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 230MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA143EQB-QZ
    PDTA143EQB-Q/SOT8015/DFN1110D-
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PDTC144EQBZ
    PDTC144EQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA143ZQBZ
    PDTA143ZQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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    • Offers in stock:
  • PDTC124EQBZ
    PDTC124EQB/SOT8015/DFN1110D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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    • Offers in stock:
  • PDTA114EQB-QZ
    PDTA114EQB-Q/SOT8015/DFN1110D-
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount, Wettable Flank
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1110D-3
    • Power - Max: 340mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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