Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased package DFN1006-3

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 9
  • PDTC115EM,315
    NOW NEXPERIA PDTC115EM - SMALL S
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • PDTC144EM,315
    0.1A, 50V, NPN
    Philips
    • Manufacturer: Philips
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTC123JM,315
    NOW NEXPERIA PDTC123JM - SMALL S
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA143ZM,315
    NOW NEXPERIA PDTA143ZM - SMALL S
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTC124XM,315
    NOW NEXPERIA PDTC124XM - SMALL S
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA123YM,315
    NOW NEXPERIA PDTA123YM - SMALL S
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTC114EM,315
    NPN RESISTOR-EQUIPPED TRANSISTOR
    Philips
    • Manufacturer: Philips
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTC114YM315
    NOW NEXPERIA PDTC114YM - SMALL S
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 230MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTC144WM,315
    PDTC144W - UPN RESISTOR-EQUIPPED
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006-3
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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