Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 100mA, 200mA package 6-TSSOP

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 1
  • PUML1,115
    TRANS NPN PREBIAS/NPN 6TSSOP
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: 6-TSSOP
    • Power - Max: 300mW
    • Transistor Type: 1 NPN Pre-Biased, 1 NPN
    • Current - Collector (Ic) (Max): 100mA, 200mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 230MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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