Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased Toshiba Semiconductor and Storage package USM

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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  • RN2316(TE85L,F)
    TRANS PREBIAS PNP 50V 0.1A USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: USM
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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