Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased Renesas Electronics America Inc IC(MAX) 800mA

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 1
  • 2SD1697-AZ
    SMALL SIGNAL BIPOLAR TRANSISTOR,
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
    • Mounting Type: Through Hole
    • Package / Case: 3-SSIP
    • Power - Max: 1W
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 300mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1mA, 500mA
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Resistor - Base (R1): 1kOhms
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