• Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 31
  • NSBA115TDP6T5G
    TRANS PREBIAS 2NPN 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 408mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 100kOhms
    Info from the market
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  • NSBC144EDP6T5G
    TRANS PREBIAS 2NPN 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • NSBC115TDP6T5G
    TRANS PREBIAS 2NPN 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 100kOhms
    Info from the market
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  • NSBA123JDP6T5G
    TRANS PREBIAS 2PNP 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 408mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • NSBC124EPDP6T5G
    TRANS PREBIAS NPN 254MW SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 250mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
    Info from the market
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  • NSBA123TDP6T5G
    TRANS PREBIAS 2PNP 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 408mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    Info from the market
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  • NSBC114EPDP6T5G
    TRANS PREBIAS NPN/PNP 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
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  • NSBC123TPDP6T5G
    TRANS PREBIAS NPN/PNP 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    Info from the market
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  • NSBC114YPDP6T5G
    TRANS PREBIAS NPN/PNP 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • NSBC144WDP6T5G
    TRANS 2NPN PREBIAS 0.408W SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 408mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 22kOhms
    Info from the market
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  • NSBC144WPDP6T5G
    TRANS PREBIAS NPN/PNP 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 22kOhms
    Info from the market
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  • NSBC144EPDP6T5G
    TRANS PREBIAS NPN/PNP 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • NSBC123JDP6T5G
    TRANS PREBIAS 2NPN 50V SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • NSBC143ZPDP6T5G
    TRANS 2NPN PREBIAS 0.339W SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 339mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
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  • NSBA143EDP6T5G
    TRANS 2PNP PREBIAS 0.408W SOT963
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SOT-963
    • Power - Max: 408mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
    Info from the market
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