• Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 4
  • SMUN5133T1G-M02
    SMUN5133 - DIGITAL BJT PNP - PRE
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70 (SOT323)
    • Power - Max: 202mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
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    • Offers with a price:
    • Offers in stock:
  • NSVMUN5234T1G
    NPN BIPOLAR DIGITAL TRANSISTOR (
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70 (SOT323)
    • Power - Max: 202mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • NSVMUN5116T1G-M02
    NSVMUN5116 - DIGITAL BJT PNP - P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70 (SOT323)
    • Power - Max: 202mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 4.7kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • NSVMUN5216T1G
    MUN5216 - NSVMUN5216 - NPN BIPOL
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70 (SOT323)
    • Power - Max: 202mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 4.7kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
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