Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased NXP Semiconductors package 6-TSOP

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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  • PBLS6005D,115
    NOW NEXPERIA PBLS6005D - SMALL S
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: SC-74, SOT-457
    • Supplier Device Package: 6-TSOP
    • Power - Max: 600mW
    • Transistor Type: 1 NPN Pre-Biased, 1 PNP
    • Current - Collector (Ic) (Max): 100mA, 700mA
    • Voltage - Collector Emitter Breakdown (Max): 50V, 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 500mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
    • Current - Collector Cutoff (Max): 1µA, 100nA
    • Frequency - Transition: 185MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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