Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 80mA

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 148
  • UNR31A9G0L
    TRANS PREBIAS PNP 100MW SSSMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: SSSMini3-F2
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNR31A500L
    TRANS PREBIAS PNP 100MW SSSMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: SSSMini3-F1
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 10kOhms
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  • RN1105ACT(TPL3)
    TRANS PREBIAS NPN 50V 0.08A CST3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: CST3
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • RN1108ACT(TPL3)
    TRANS PREBIAS NPN 50V 0.08A CST3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: CST3
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • UNR32ATG0L
    TRANS PREBIAS NPN 100MW SSSMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: SSSMini3-F2
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • UNR32AAG0L
    TRANS PREBIAS NPN 100MW SSSMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: SSSMini3-F2
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • NP061A500A
    TRANS PREBIAS DUAL PNP SSSMINI6
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SSSMini6-F1
    • Power - Max: 125mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 10kOhms
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  • UNR51A1G0L
    TRANS PREBIAS PNP 150MW SMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SC-85
    • Supplier Device Package: SMini3-F2
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • UNRF2A700A
    TRANS PREBIAS NPN 100MW ML3-N2
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: ML3-N2
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 22kOhms
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  • NP061A300A
    TRANS PREBIAS DUAL PNP SSSMINI6
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-963
    • Supplier Device Package: SSSMini6-F1
    • Power - Max: 125mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • UNR32AMG0L
    TRANS PREBIAS NPN 100MW SSSMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: SSSMini3-F2
    • Power - Max: 100mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • UNR91A6G0L
    TRANS PREBIAS PNP 125MW SSMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SC-89, SOT-490
    • Supplier Device Package: SSMini3-F3
    • Power - Max: 125mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 4.7kOhms
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  • UNR92A2G0L
    TRANS PREBIAS NPN 125MW SSMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SC-89, SOT-490
    • Supplier Device Package: SSMini3-F3
    • Power - Max: 125mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • UNR52A6G0L
    TRANS PREBIAS NPN 150MW SMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SC-85
    • Supplier Device Package: SMini3-F2
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 150MHz
    • Resistor - Base (R1): 4.7kOhms
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  • UNR51A6G0L
    TRANS PREBIAS PNP 150MW SMINI3
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: SC-85
    • Supplier Device Package: SMini3-F2
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 80MHz
    • Resistor - Base (R1): 4.7kOhms
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