Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased IC(MAX) 70mA, 100mA
-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
- Power - Max: 250mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 70mA, 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Frequency - Transition: 100MHz, 200MHz
- Resistor - Base (R1): 47kOhms, 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
- Power - Max: 250mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 70mA, 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Frequency - Transition: 100MHz, 200MHz
- Resistor - Base (R1): 47kOhms, 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
- Power - Max: 250mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 70mA, 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Frequency - Transition: 100MHz, 200MHz
- Resistor - Base (R1): 47kOhms, 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
- Power - Max: 250mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 70mA, 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Frequency - Transition: 100MHz, 200MHz
- Resistor - Base (R1): 47kOhms, 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
- Power - Max: 250mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 70mA, 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Frequency - Transition: 100MHz, 200MHz
- Resistor - Base (R1): 47kOhms, 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100