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List Table
Found: 307
  • PDTD123YS,126
    TRANS PREBIAS NPN 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • BCR512E6327HTSA1
    TRANS PREBIAS NPN 0.33W SOT23-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23
    • Power - Max: 330mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • DDTD122TC-7-F
    TRANS PREBIAS NPN 200MW SOT23-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 220Ohms
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  • PDTD123ES,126
    TRANS PREBIAS NPN 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
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  • DTB143ECHZGT116
    -500MA/-50V DIGITAL TRANSISTOR (
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SST3
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 500mA
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • DTB113ECHZGT116
    DTB113ECHZG IS THE HIGH RELIABIL
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SST3
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased + Diode
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
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  • DDTD114EC-7-F
    TRANS PREBIAS NPN 200MW SOT23-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTD143XTVL
    TRANS PREBIAS NPN 50V TO236AB
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB
    • Power - Max: 320mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 225MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • DTB513ZETL
    TRANS PREBIAS PNP 150MW EMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: EMT3
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 260MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • DTD123TSTP
    TRANS PREBIAS NPN 300MW SPT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: SC-72 Formed Leads
    • Supplier Device Package: SPT
    • Power - Max: 300mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
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  • DDTB143TU-7-F
    TRANS PREBIAS PNP 200MW SOT323
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SOT-323
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
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  • DTD143TKT146
    TRANS PREBIAS NPN 200MW SMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
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  • DDTD123TU-7-F
    TRANS PREBIAS NPN 200MW SOT323
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SOT-323
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
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  • DTD523YETL
    TRANS PREBIAS NPN 150MW EMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: EMT3
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 260MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • DTD114GCT116
    NPN 500MA/50V DIGITAL TRANSISTOR
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SST3
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Emitter Base (R2): 10kOhms
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