Diodes - Variable Capacitance (Varicaps, Varactors) Microchip Technology Chip | Diodes

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Found: 136

MV31026-150A/TR

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13.1
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 1500 @ 4V, 50MHz
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MV21003-150A/TR

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.5pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 30V
- Capacitance Ratio: 3.4
- Capacitance Ratio Condition: C0/C30
- Q @ Vr, F: 7000 @ 4V, 50MHz
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MV39002-P2715

GAAS TVAR NON HERMETIC FLIP CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.4pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 18V
- Capacitance Ratio: 5.3
- Capacitance Ratio Condition: C2/C12
- Q @ Vr, F: 4000 @ 4V, 50MHz
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GC1502-00

SI TVAR NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 1.2pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 30V
- Capacitance Ratio: 3.4
- Capacitance Ratio Condition: C0/C30
- Q @ Vr, F: 3800 @ 4V, 50MHz
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GC15007-150A

SI TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.2pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13
- Capacitance Ratio Condition: C0/C20
- Q @ Vr, F: 1000 @ 4V, 50MHz
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MV31016-P00

GAAS TVAR NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 1.8pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 9.6
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 3000 @ 4V, 50MHz
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MV31020-P00

GAAS TVAR NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 3.3pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 11.3
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 2000 @ 4V, 50MHz
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MV31022-150A

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 12
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 1500 @ 4V, 50MHz
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KV1913A-150A/TR

SI TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 6.2pF @ 8V, 1MHz
- Voltage - Peak Reverse (Max): 12V
- Q @ Vr, F: 400 @ 4V, 50MHz
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MV31026-150A

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13.1
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 1500 @ 4V, 50MHz
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GC15006-150A

SI TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.14pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13
- Capacitance Ratio Condition: C0/C20
- Q @ Vr, F: 1200 @ 4V, 50MHz
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GC15006-00

SI TVAR NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Series: GC15000
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.14pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13
- Capacitance Ratio Condition: C0/C20
- Q @ Vr, F: 1200 @ 4V, 50MHz
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MV31026-154-4/TR

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13.1
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 1500 @ 4V, 50MHz
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MV21007-150A

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 1.2pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 30V
- Capacitance Ratio: 4.2
- Capacitance Ratio Condition: C0/C30
- Q @ Vr, F: 5000 @ 4V, 50MHz
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MV32005-150A

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 1.8pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 3.4
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 3000 @ 4V, 50MHz
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