- Manufacturer
- Voltage - Peak Reverse (Max)
- Supplier Device Package
-
- Power Dissipation (Max)
- Resistance @ If, F
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Diode Type
|
Supplier Device Package
|
Operating Temperature
|
Current - Max
|
Capacitance @ Vr, F
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HSMS-282C-BLKG | RF DIODE SCHOTTKY 15V SOT323 | Broadcom Limited | SC-70, SOT-323 | 15V | Schottky - 1 Pair Series Connection | SOT-323 | 150°C (TJ) | 1A | 1pF @ 0V, 1MHz | 12Ohm @ 5mA, 1MHz | ||
| HSMS-282M-TR2G | RF DIODE SCHOTTKY 15V SOT363 | Broadcom Limited | 6-TSSOP, SC-88, SOT-363 | 15V | Schottky - 2 Pair Common Cathode | SOT-363 | 150°C (TJ) | 1A | 1pF @ 0V, 1MHz | 12Ohm @ 5mA, 1MHz | ||
| HSMS-280M-BLKG | RF DIODE SCHOTTKY 70V SOT363 | Broadcom Limited | 6-TSSOP, SC-88, SOT-363 | 70V | Schottky - 2 Pair Common Cathode | SOT-363 | 150°C (TJ) | 1A | 2pF @ 0V, 1MHz | 35Ohm @ 5mA, 1MHz | ||
| HSCH-5312 | DIODE SCHOTTKY 500V BEAM LEAD | Broadcom Limited | ||||||||||
| BAR81WE6327BTSA1 | DIODE STANDAR 30V 100MW SOT343-4 | Infineon Technologies | SC-82A, SOT-343 | 30V | Standard - Single | PG-SOT343-3D | 150°C (TJ) | 100mA | 0.9pF @ 3V, 1MHz | 100mW | 1Ohm @ 5mA, 100MHz | |
| MADP-010633-13920T | DIODE,PIN,1392,CCM218 | MACOM Technology Solutions | 0805 (2012 Metric) | 500V | PIN - Single | 0805 | 175°C (TJ) | 0.4pF @ 50V, 1MHz | 100 W | 600mOhm @ 100mA, 100MHz | ||
| MA4SPS421 | DIODE,SILICON-GLASS,PIN,CHIP | MACOM Technology Solutions | Die | 200V | PIN - Single | Die | -55°C ~ 125°C (TJ) | 250mA | 0.175pF @ 0V, 1MHz | 1.8W | 6.2Ohm @ 10mA, 1GHz | MA4SPS421 Surmount™ |
| MA4L022-134 | RF DIODE PIN 35V CHIP | MACOM Technology Solutions | Die | 35V | PIN - Single | Chip | -55°C ~ 125°C (TJ) | 100mA | 0.19pF @ 0V, 1MHz | 2Ohm @ 10mA, 500MHz | ||
| MSS20-047-H27 | SCHOTTKY DIODE,BEAMLEAD, H27 | MACOM Technology Solutions | H27 | 1V | Schottky - Single | H27 | -65°C ~ 150°C | 35mA | 0.22pF @ 0V, 1MHz | 100mW | ||
| UM7010CR | SI PPIN HERMETIC STUD | Microchip Technology | Stud | 1000V | PIN - Single | -65°C ~ 175°C | 0.9pF @ 100V, 1MHz | 10W | 1Ohm @ 100mA, 100MHz | |||
| UM7104DR | SI PPIN HERMETIC STUD | Microchip Technology | Stud | 400V | PIN - Single | -65°C ~ 175°C | 1.2pF @ 100V, 1MHz | 7.5W | 600mOhm @ 100mA, 100MHz | |||
| MG49123-42 | GAAS GUNN EPI DOWN HERMETIC STUD | Microchip Technology | Stud | |||||||||
| UM7501F | SI PPIN HERMETIC MELF | Microchip Technology | 100V | PIN - Single | -65°C ~ 175°C | 1pF @ 100V, 1MHz | 10W | 1Ohm @ 50mA, 100MHz | ||||
| SMS3923-005LF | RF DIODE SCHOTTKY 20V 75MW SOT23 | Skyworks Solutions Inc. | TO-236-3, SC-59, SOT-23-3 | 20V | Schottky - 1 Pair Series Connection | SOT-23-3 | 150°C (TJ) | 50mA | 75mW | |||
| BA782-E3-18 | RF DIODE PIN 35V SOD123 | Vishay General Semiconductor - Diodes Division | SOD-123 | 35V | PIN - Single | SOD-123 | 125°C (TJ) | 100mA | 1.25pF @ 3V, 1MHz | 700mOhm @ 3mA, 1GHz |
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