- Manufacturer
- Voltage - Peak Reverse (Max)
- Supplier Device Package
-
- Power Dissipation (Max)
- Resistance @ If, F
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Diode Type
|
Supplier Device Package
|
Operating Temperature
|
Current - Max
|
Capacitance @ Vr, F
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HSMS-2829-TR1 | RF DIODE SCHOTTKY 15V SOT143-4 | Broadcom Limited | TO-253-4, TO-253AA | 15V | Schottky - Cross Over | SOT-143-4 | 150°C (TJ) | 1A | 1pF @ 0V, 1MHz | 12Ohm @ 5mA, 1MHz | ||
| HSCH-5310 | DIODE SCHOTTKY 500V BEAM LEAD | Broadcom Limited | ||||||||||
| BAR 64-02V E6327 | RF DIODE PIN 150V 250MW SC79-2 | Infineon Technologies | SC-79, SOD-523 | 150V | PIN - Single | PG-SC79-2 | 150°C (TJ) | 100mA | 0.35pF @ 20V, 1MHz | 250mW | 1.35Ohm @ 100mA, 100MHz | |
| BA 892-02V E6433 | RF DIODE STANDARD 35V SC79-2 | Infineon Technologies | SC-79, SOD-523 | 35V | Standard - Single | PG-SC79-2 | 150°C (TJ) | 100mA | 1.1pF @ 3V, 1MHz | 500mOhm @ 10mA, 100MHz | ||
| MADL-011014-001000 | LIMITER HIGH POWER,1.0-2.0GHZ,HE | MACOM Technology Solutions | 2-SMD, No Lead | PIN - 1 Pair Series Connection | SMD | 175°C (TJ) | 320 W | |||||
| MADS-001317-1500AP | RF DIODE SCHOTTKY 7V | MACOM Technology Solutions | 2-SMD, No Lead | 7V | Schottky | -65°C ~ 125°C | 0.02pF @ 0V, 1MHz | |||||
| MADP-000235-10720T | RF DIODE PIN 35V 7.5W | MACOM Technology Solutions | 2-SMD | 35V | PIN - Single | -55°C ~ 150°C (TA) | 1.5A | 1.2pF @ 10V, 1MHz | 7.5W | 500mOhm @ 10mA, 100MHz | ||
| GC4721-42 | SI LIMITER HERMETIC STUD | Microchip Technology | Stud | 120V | PIN - Single | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 5W | 1.5Ohm @ 10mA, 100MHz | |||
| UM9301F | SI PPIN HERMETIC MELF | Microchip Technology | Axial | 75V | PIN - Single | Axial | -65°C ~ 175°C | 0.8pF @ 0V, 100MHz | 1W | 3Ohm @ 100mA, 100MHz | ||
| GC4741-150A | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 30V | PIN - Single | Chip | -55°C ~ 150°C | 0.1pF @ 6V, 1MHz | 3W | 2Ohm @ 10mA, 100MHz | ||
| LXZ1000-23-13/TR | DIODE SCHOTTKY NON HERMETIC SMT | Microchip Technology | TO-236-3, SC-59, SOT-23-3 | 1V | PIN - Single | SOT-23-3 | 125°C (TJ) | 0.3pF @ 500mV, 1MHz | 75mW | |||
| UM4310D | SI PPIN HERMETIC STUD | Microchip Technology | Stud | 1000V | PIN - Single | 2.2pF @ 100V, 1MHz | 15W | 1.5Ohm @ 100mA, 100MHz | ||||
| UM4301D | SI PPIN HERMETIC STUD | Microchip Technology | Stud | 100V | PIN - Single | 2.2pF @ 100V, 1MHz | 15W | 1.5Ohm @ 100mA, 100MHz | ||||
| MMBD101LT1G | DIODE SCHOTTKY 7V 225MW SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 7V | Schottky - Single | SOT-23-3 (TO-236) | 150°C (TJ) | 1pF @ 0V, 1MHz | 225mW | |||
| BA783-G3-18 | RF DIODE PIN 35V SOD123 | Vishay General Semiconductor - Diodes Division | SOD-123 | 35V | PIN - Single | SOD-123 | 125°C (TJ) | 100mA | 1.2pF @ 3V, 1MHz | 1.2Ohm @ 3mA, 1GHz |
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