• Manufacturer
  • Current - Average Rectified (Io)
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 69821
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
Series
CDBF0530-HF DIODE SCHOTTKY 20V 500MA 1005 Comchip Technology 1005 (2512 Metric) 500mA Schottky Surface Mount 1005/SOD-323F Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 20V 100pF @ 0V, 1MHz 470mV @ 500mA 20V 125°C (Max)
IDH15S120AKSA1 DIODE SCHOTTKY 1200V 15A TO220-2 Infineon Technologies TO-220-2 15A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2-2 No Recovery Time > 500mA (Io) 360µA @ 1200V 750pF @ 1V, 1MHz 1.8V @ 15A 1200V 0ns -55°C ~ 175°C CoolSiC™+
S2180 RECTIFIER Microsemi Corporation
NTE624 R-SI DUAL 600V 6A 250NS NTE Electronics, Inc
FFPF06U20DPTU DIODE ARRAY GP 200V 6A TO220F onsemi TO-220-3 Full Pack Standard Through Hole TO-220F-3 Fast Recovery =< 500ns, > 200mA (Io) 6µA @ 200V 1.2V @ 6A 200V 35ns -65°C ~ 150°C 1 Pair Common Anode 6A
FFSH1065B-F085 650V 10A SIC SBD GEN1.5 onsemi TO-247-2 11.5A (DC) Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 40µA @ 650V 421pF @ 1V, 100kHz 650V 0ns -55°C ~ 175°C Automotive, AEC-Q101
SBM260VAL-AU_R1_000A1 SOD-123FL, SKY Panjit International Inc. SOD-123F 2A Schottky Surface Mount SOD-123FL Fast Recovery =< 500ns, > 200mA (Io) 50µA @ 60V 100pF @ 4V, 1MHz 540mV @ 2A 60V -55°C ~ 150°C Automotive, AEC-Q101
P3D06016I2 DIODE SCHOTTKY 600V 16A TO220I-2 PN Junction Semiconductor TO-220I-2 28A (DC) Silicon Carbide Schottky TO-220I-2 No Recovery Time > 500mA (Io) 45 µA @ 650 V 650V 0ns -55°C ~ 175°C (TJ) P3D
STTH20R04W DIODE GEN PURP 400V 20A DO247 STMicroelectronics DO-247-2 (Straight Leads) 20A Standard Through Hole DO-247 Fast Recovery =< 500ns, > 200mA (Io) 20µA @ 400V 1.7V @ 20A 400V 45ns 175°C (Max)
S1DL MHG DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation DO-219AB 1A Standard Surface Mount Sub SMA Standard Recovery >500ns, > 200mA (Io) 5µA @ 200V 9pF @ 4V, 1MHz 1.1V @ 1A 200V 1.8µs -55°C ~ 175°C
MBR40150PT C0G DIODE ARRAY SCHOTTKY 150V TO247 Taiwan Semiconductor Corporation TO-247-3 Schottky Through Hole TO-247AD (TO-3P) Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 150V 1.01V @ 40A 150V -55°C ~ 150°C 1 Pair Common Cathode 40A
VS-12CWQ04FNTRR-M3 DIODE ARRAY SCHOTTKY 40V 6A DPAK Vishay General Semiconductor - Diodes Division TO-252-3, DPak (2 Leads + Tab), SC-63 Schottky Surface Mount D-PAK (TO-252AA) Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 40V 680mV @ 12A 40V 150°C (Max) 1 Pair Common Cathode 6A
VS-UFB201FA40 DIODE GEN PURP 400V 120A SOT227 Vishay General Semiconductor - Diodes Division SOT-227-4, miniBLOC Standard Chassis Mount SOT-227 Fast Recovery =< 500ns, > 200mA (Io) 50µA @ 400V 1.59V @ 100A 400V 80ns -55°C ~ 175°C 2 Independent 120A
NSB8AT-E3/45 DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8A Standard Surface Mount TO-263AB (D²PAK) Standard Recovery >500ns, > 200mA (Io) 10µA @ 50V 55pF @ 4V, 1MHz 1.1V @ 8A 50V -55°C ~ 150°C
VS-12CWQ10FNTRPBF DIODE ARRAY SCHOTTKY 100V DPAK Vishay General Semiconductor - Diodes Division TO-252-3, DPak (2 Leads + Tab), SC-63 Schottky Surface Mount D-PAK (TO-252AA) Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 100V 800mV @ 6A 100V -55°C ~ 150°C 1 Pair Common Cathode 6A
  • 10
  • 15
  • 50
  • 100