- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FR104B-G | RECTIFIER FAST RECOVERY 400V 1A | Comchip Technology | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 400V | 25pF @ 4V, 1MHz | 1.3V @ 1A | 400V | 150ns | -55°C ~ 150°C | |||
| SBR10B45P5-7D | DIODE SBR 45V 10A POWERDI5 | Diodes Incorporated | PowerDI™ 5 | 10A | Super Barrier | Surface Mount | PowerDI™ 5 | Standard Recovery >500ns, > 200mA (Io) | 380µA @ 45V | 550mV @ 10A | 45V | -55°C ~ 150°C | SBR® | ||||
| S1KFP | RECTIFIER DIODE, 1.2A, 800V | Fairchild Semiconductor | SOD-123H | 1.2A | Standard | Surface Mount | SOD-123HE | Standard Recovery >500ns, > 200mA (Io) | 5µA @ 800V | 18pF @ 0V, 1MHz | 1.3V @ 1.2A | 800V | 1.5µs | -55°C ~ 150°C | Automotive, AEC-Q101 | ||
| UPS115U/TR7 | DIODE SCHOTTKY 15V 1A POWERMITE | Microchip Technology | DO-216AA | 1A | Schottky | Surface Mount | Powermite | Fast Recovery =< 500ns, > 200mA (Io) | 10mA @ 15V | 220mV @ 1A | 15V | -55°C ~ 150°C | |||||
| MBRD1035CTLT4 | DEVELOPMENT KITS/ACCESSORIES | Rochester Electronics, LLC | TO-252-3, DPak (2 Leads + Tab), SC-63 | Schottky | Surface Mount | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 35V | 470mV @ 5A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 5A | SWITCHMODE™ | |||
| S1KW80KA-5 | DIODE GEN PURP 80KV 1.5A MODULE | Semtech Corporation | Module | 1.5A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 1mA @ 80000V | 80V @ 1.5A | 80000V | 2µs | -55°C ~ 150°C | |||||
| MBRF10200 | DIODE SCHOTTKY 200V 10A ITO220AC | SMC Diode Solutions | TO-220-2 Full Pack, Isolated Tab | 10A | Schottky | Through Hole | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 950mV @ 10A | 200V | -55°C ~ 175°C | |||||
| STTH5R06DJF-TR | DIODE GEN PURP 600V 5A POWERFLAT | STMicroelectronics | 8-PowerVDFN | 5A | Standard | Surface Mount | PowerFlat™ (5x6) | Fast Recovery =< 500ns, > 200mA (Io) | 60µA @ 600V | 2V @ 5A | 600V | 55ns | 175°C (Max) | ||||
| SR1503HA0G | DIODE SCHOTTKY 30V 15A R-6 | Taiwan Semiconductor Corporation | R-6, Axial | 15A | Schottky | Through Hole | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 30V | 550mV @ 15A | 30V | -50°C ~ 150°C | Automotive, AEC-Q101 | ||||
| SR104 A0G | DIODE SCHOTTKY 40V 1A DO204AL | Taiwan Semiconductor Corporation | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 40V | 550mV @ 1A | 40V | -55°C ~ 125°C | |||||
| MUR160AHR1G | DIODE GEN PURP 600V 1A DO204AL | Taiwan Semiconductor Corporation | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 600V | 27pF @ 4V, 1MHz | 1.25V @ 1A | 600V | 50ns | -55°C ~ 175°C | Automotive, AEC-Q101 | ||
| RSFJLHRVG | DIODE GEN PURP 600V 500MA SUBSMA | Taiwan Semiconductor Corporation | DO-219AB | 500mA | Standard | Surface Mount | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 600V | 4pF @ 4V, 1MHz | 1.3V @ 500mA | 600V | 250ns | -55°C ~ 150°C | Automotive, AEC-Q101 | ||
| MBR30150CTHC0G | DIODE ARRAY SCHOTTKY 150V TO220 | Taiwan Semiconductor Corporation | TO-220-3 | Schottky | Through Hole | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 150V | 1.02V @ 30A | 150V | -55°C ~ 150°C | 1 Pair Common Cathode | 30A | Automotive, AEC-Q101 | |||
| ES1ALHRQG | DIODE GEN PURP 50V 1A SUB SMA | Taiwan Semiconductor Corporation | DO-219AB | 1A | Standard | Surface Mount | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 10pF @ 4V, 1MHz | 950mV @ 1A | 50V | 35ns | -55°C ~ 150°C | Automotive, AEC-Q101 | ||
| 1N4948GPHE3/54 | DIODE GEN PURP 1KV 1A DO204AL | Vishay General Semiconductor - Diodes Division | DO-204AL, DO-41, Axial | 1A | Standard | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1000V | 15pF @ 4V, 1MHz | 1.3V @ 1A | 1000V | 500ns | -65°C ~ 175°C | SUPERECTIFIER® |
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