SBL1040HE3/45
|
DIODE SCHOTTKY 40V 10A TO220AC |
Vishay General Semiconductor - Diodes Division |
TO-220-2 |
10A |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
|
600mV @ 10A |
40V |
|
-40°C ~ 125°C |
Automotive, AEC-Q101 |
10ETS08STRR
|
DIODE GEN PURP 800V 10A D2PAK |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
TO-263AB (D²PAK) |
Standard Recovery >500ns, > 200mA (Io) |
50µA @ 800V |
|
1.1V @ 10A |
800V |
|
-40°C ~ 150°C |
|
VS-STPS1045BTRRPBF
|
DIODE SCHOTTKY 45V 10A DPAK |
Vishay General Semiconductor - Diodes Division |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A |
Schottky |
Surface Mount |
D-PAK (TO-252AA) |
Fast Recovery =< 500ns, > 200mA (Io) |
200µA @ 45V |
|
570mV @ 10A |
45V |
|
-40°C ~ 175°C |
|
VS-STPS1045BTRLPBF
|
DIODE SCHOTTKY 45V 10A DPAK |
Vishay General Semiconductor - Diodes Division |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A |
Schottky |
Surface Mount |
D-PAK (TO-252AA) |
Fast Recovery =< 500ns, > 200mA (Io) |
200µA @ 45V |
|
570mV @ 10A |
45V |
|
-40°C ~ 175°C |
|
VF10150S-M3/4W
|
DIODE SCHOTTKY 10A 150V ITO220AB |
Vishay General Semiconductor - Diodes Division |
TO-220-3 Full Pack, Isolated Tab |
10A |
Schottky |
Through Hole |
ITO-220AB |
Fast Recovery =< 500ns, > 200mA (Io) |
150µA @ 150V |
|
1.2V @ 10A |
150V |
|
-55°C ~ 150°C |
|
VS-10ETF02STRR-M3
|
DIODE GEN PURP 200V 10A D2PAK |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 200V |
|
1.2V @ 10A |
200V |
200ns |
-40°C ~ 150°C |
|
VS-10ETF10FPPBF
|
DIODE GEN PURP 1KV 10A TO220FP |
Vishay General Semiconductor - Diodes Division |
TO-220-2 Full Pack |
10A |
Standard |
Through Hole |
TO-220AC Full Pack |
Fast Recovery =< 500ns, > 200mA (Io) |
|
|
1.33V @ 10A |
1000V |
310ns |
-40°C ~ 150°C |
|
VS-10TQ035STRL-M3
|
DIODE SCHOTTKY 35V 10A D2PAK |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
2mA @ 35V |
900pF @ 5V, 1MHz |
570mV @ 10A |
35V |
|
-55°C ~ 175°C |
|
S10CG-M3/I
|
DIODE GEN PURP 400V 10A DO214AB |
Vishay General Semiconductor - Diodes Division |
DO-214AB, SMC |
10A |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
10µA @ 400V |
79pF @ 4V, 1MHz |
1V @ 10A |
400V |
5µs |
-55°C ~ 150°C |
|
MBR1045/45
|
DIODE SCHOTTKY 45V 10A TO220AC |
Vishay General Semiconductor - Diodes Division |
TO-220-2 |
10A |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 45V |
|
840mV @ 20A |
45V |
|
-65°C ~ 150°C |
|
SS10P3HM3/86A
|
DIODE SCHOTTKY 30V 10A TO277A |
Vishay General Semiconductor - Diodes Division |
TO-277, 3-PowerDFN |
10A |
Schottky |
Surface Mount |
TO-277A (SMPC) |
Fast Recovery =< 500ns, > 200mA (Io) |
800µA @ 30V |
|
560mV @ 10A |
30V |
|
-55°C ~ 150°C |
eSMP® |
10ETS08S
|
DIODE GEN PURP 800V 10A D2PAK |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
TO-263AB (D²PAK) |
Standard Recovery >500ns, > 200mA (Io) |
50µA @ 800V |
|
1.1V @ 10A |
800V |
|
-40°C ~ 150°C |
|
MBR10100-E3/4W
|
DIODE SCHOTTKY 100V 10A TO220AC |
Vishay General Semiconductor - Diodes Division |
TO-220-2 |
10A |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 100V |
|
800mV @ 10A |
100V |
|
-65°C ~ 150°C |
TMBS® |
MBRB1060-E3/45
|
DIODE SCHOTTKY 60V 10A TO263AB |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 60V |
|
800mV @ 10A |
60V |
|
-65°C ~ 150°C |
|
MBRB1045HE3/81
|
DIODE SCHOTTKY 45V 10A TO263AB |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 45V |
|
840mV @ 20A |
45V |
|
-65°C ~ 150°C |
|