-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 145ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Operating Temperature - Junction: -40°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Operating Temperature - Junction: -55°C ~ 175°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Operating Temperature - Junction: -40°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 310ns
- Current - Reverse Leakage @ Vr: 100µA @ 1000V
- Operating Temperature - Junction: -40°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Capacitance @ Vr, F: 760pF @ 5V, 1MHz
- Operating Temperature - Junction: -40°C ~ 175°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 45V
- Capacitance @ Vr, F: 600pF @ 5V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 145ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Operating Temperature - Junction: -40°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 310ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature - Junction: -40°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Series: TMBS®
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Operating Temperature - Junction: -65°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 800µA @ 25V
- Operating Temperature - Junction: -65°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 500µA @ 1200V
- Operating Temperature - Junction: -40°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Series: TMBS®
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 600µA @ 80V
- Operating Temperature - Junction: -55°C ~ 150°C
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-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220-2 Full Pack
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 310ns
- Current - Reverse Leakage @ Vr: 100µA @ 1000V
- Operating Temperature - Junction: -40°C ~ 150°C
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- Offers in stock:
-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: -40°C ~ 150°C
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- Offers in stock:
-
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Capacitance @ Vr, F: 760pF @ 5V, 1MHz
- Operating Temperature - Junction: -40°C ~ 175°C
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- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100