Semiconductors, Diodes, Diodes - Rectifiers - Arrays Toshiba Semiconductor and Storage 10mA (DC)

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 1
  • JDH2S02SL,L3F
    X34 HIGH FREQUENCY SCHOTTKY BARR
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 2-SMD, No Lead
    • Supplier Device Package: SL2
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 10V
    • Current - Average Rectified (Io): 10mA (DC)
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 25µA @ 500mV
    • Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
    • Operating Temperature - Junction: 125°C (Max)
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