Semiconductors, Diodes, Diodes - Rectifiers - Arrays Rohm Semiconductor 10A (DC)

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 16
  • SCS210AJHRTLL
    DIODE SCHOTTKY 650V 10A TO263AB
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263AB
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS310AMC
    SHORTER RECOVERY TIME, ENABLING
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FM
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS110AMC
    DIODE SCHOTTKY 600V 10A TO220FM
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220FM
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 430pF @ 1V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • SCS210KE2C
    DIODE SCHOTTKY 1200V 10A TO247
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS210KGC
    DIODE SCHOTTKY 1.2KV 10A TO220AC
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Capacitance @ Vr, F: 550pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS210KGC17
    DIODE SCHOTTKY 1.2KV 10A TO220AC
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220ACFP
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Capacitance @ Vr, F: 550pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • SCS210AGC
    DIODE SCHOTTKY 650V 10A TO220AC
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS210AJTLL
    DIODE SCHOTTKY 650V 10A TO263AB
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263AB
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS310APC9
    DIODE SC SCHKY 650V 10A TO220ACP
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS310AHGC9
    SHORTER RECOVERY TIME, ENABLING
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220ACP
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS310AJTLL
    DIODES SILICON CARBIDE
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: LPTL
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS210AMC
    DIODE SCHOTTKY 650V 10A TO220FM
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220FM
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS110KGC
    DIODE SCHOTTKY 1.2KV 10A TO220AC
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Capacitance @ Vr, F: 650pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • SCS210AGC17
    DIODE SCHOTTKY 650V 10A TO220AC
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220ACFP
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • SCS210KGHRC
    DIODE SCHOTTKY 1200V 10A TO220-2
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Capacitance @ Vr, F: 550pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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