• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 206
  • MMBD1202
    DIODE GEN PURP 100V 200MA SOT23
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 25nA @ 100V
    • Operating Temperature - Junction: 150°C (Max)
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  • BAS21_S00Z
    DIODE GEN PURP 250V 200MA SOT23
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 250V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 100nA @ 200V
    • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • FDH300
    DIODE GEN PURP 125V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 125V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 1nA @ 125V
    • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BAV21_T26A
    DIODE GEN PURP 250V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 250V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 100nA @ 200V
    • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BAV20TR
    DIODE GEN PURP 200V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 100nA @ 200V
    • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • 1N914B_S00Z
    DIODE GEN PURP 100V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 5µA @ 75V
    • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • 1N4150_T50A
    DIODE GEN PURP 50V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 6ns
    • Current - Reverse Leakage @ Vr: 100nA @ 50V
    • Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • 1N914
    DIODE GEN PURP 100V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 5µA @ 75V
    • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • 1N457TR
    1N457 - HIGH CONDUCTANCE LOW LEA
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 70V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 25nA @ 60V
    • Capacitance @ Vr, F: 8pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • FDH300ATR
    DIODE GEN PURP 125V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 125V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 1nA @ 125V
    • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BAY80
    DIODE GEN PURP 150V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 150mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 100nA @ 120V
    • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • 1N4148-T50R
    DIODE GEN PURP 100V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 5µA @ 75V
    • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BAY71
    DIODE GEN PURP 50V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 100nA @ 35V
    • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • 1S922TR
    DIODE GEN PURP 150V 200MA DO35
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 100nA @ 150V
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  • SB02-09C-TB-E
    DIODE SCHOTTKY 90V 200MA 3CP
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: 3-CP
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 90V
    • Current - Average Rectified (Io): 200mA
    • Voltage - Forward (Vf) (Max) @ If: 700mV @ 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 10ns
    • Current - Reverse Leakage @ Vr: 50µA @ 45V
    • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 125°C
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