Semiconductors, Diodes, Diodes - Rectifiers - Arrays NXP USA Inc. 8A

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 12
  • BY229X-800,127
    DIODE GEN PURP 600V 8A TO220F
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 135ns
    • Current - Reverse Leakage @ Vr: 400µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • BYC8DX-600,127
    NOW WEEN - BYC8DX-600 - HYPERFAS
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 20ns
    • Current - Reverse Leakage @ Vr: 40µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • BY229X-200,127
    DIODE GEN PURP 150V 8A TO220F
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 135ns
    • Current - Reverse Leakage @ Vr: 400µA @ 150V
    • Operating Temperature - Junction: 150°C (Max)
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  • BYR29-600,127
    NOW WEEN - BYR29-600 - ULTRAFAST
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • BY229-600,127
    DIODE GEN PURP 500V 8A TO220AC
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 135ns
    • Current - Reverse Leakage @ Vr: 400µA @ 500V
    • Operating Temperature - Junction: 150°C (Max)
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  • BYC8X-600P,127
    NOW WEEN - BYC8X-600P - HYPERFAS
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 18ns
    • Current - Reverse Leakage @ Vr: 20µA @ 600V
    • Operating Temperature - Junction: 175°C (Max)
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  • BYC8B-600PQP
    DIODE GEN PURP 600V 8A
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 18ns
    • Current - Reverse Leakage @ Vr: 20µA @ 600V
    • Operating Temperature - Junction: 175°C (Max)
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  • BY229X-600,127
    DIODE GEN PURP 500V 8A TO220F
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 135ns
    • Current - Reverse Leakage @ Vr: 400µA @ 500V
    • Operating Temperature - Junction: 150°C (Max)
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  • BY329X-1200,127
    DIODE GEN PURP 1.2KV 8A TO220F
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 145ns
    • Current - Reverse Leakage @ Vr: 1mA @ 1000V
    • Operating Temperature - Junction: 150°C (Max)
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  • BYR29X-600,127
    NOW WEEN - BYR29X-600 - ULTRAFAS
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • BY329-1200,127
    DIODE GEN PURP 1.2KV 8A TO220AC
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 135ns
    • Current - Reverse Leakage @ Vr: 1mA @ 1000V
    • Operating Temperature - Junction: 150°C (Max)
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  • BY329-1000,127
    DIODE GEN PURP 1KV 8A TO220AC
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 8A
    • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 135ns
    • Current - Reverse Leakage @ Vr: 1mA @ 800V
    • Operating Temperature - Junction: 150°C (Max)
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  • 10
  • 15
  • 50
  • 100