Semiconductors, Diodes, Diodes - Rectifiers - Arrays NXP USA Inc. 6A (DC)

Found: 3
  • DIODE GEN PURP 1.5KV 6A TO220F
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1500V
    • Current - Average Rectified (Io): 6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6.5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 160ns
    • Current - Reverse Leakage @ Vr: 250µA @ 1300V
    • Operating Temperature - Junction: 150°C (Max)
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  • DIODE GEN PURP 1.5KV 6A TO220AC
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1500V
    • Current - Average Rectified (Io): 6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6.5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 160ns
    • Current - Reverse Leakage @ Vr: 250µA @ 1300V
    • Operating Temperature - Junction: 150°C (Max)
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  • DIODE GEN PURP 1.5KV 6A TO220F
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1500V
    • Current - Average Rectified (Io): 6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 6.5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 230ns
    • Operating Temperature - Junction: 150°C (Max)
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