Semiconductors, Diodes, Diodes - Rectifiers - Arrays NXP USA Inc. 600mA

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 1
  • BYD37M,115
    DIODE AVALANCHE 1KV 600MA MELF
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SOD-87
    • Supplier Device Package: MELF
    • Diode Type: Avalanche
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 600mA
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 300ns
    • Current - Reverse Leakage @ Vr: 1µA @ 1000V
    • Capacitance @ Vr, F: 20pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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