Found: 6
  • DIODE AVALANCHE 600V 1.5A MELF
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SOD-87
    • Supplier Device Package: MELF
    • Diode Type: Avalanche
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 1.5A
    • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 3µs
    • Current - Reverse Leakage @ Vr: 1µA @ 600V
    • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • NOW NEXPERIA PMEG2015EPK - RECTI
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: 2-XDFN
    • Supplier Device Package: DFN1608D-2
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 20V
    • Current - Average Rectified (Io): 1.5A
    • Voltage - Forward (Vf) (Max) @ If: 420mV @ 1.5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 5ns
    • Current - Reverse Leakage @ Vr: 350µA @ 10V
    • Capacitance @ Vr, F: 120pF @ 1V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • DIODE AVALANCHE 400V 1.5A MELF
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SOD-87
    • Supplier Device Package: MELF
    • Diode Type: Avalanche
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 1.5A
    • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 3µs
    • Current - Reverse Leakage @ Vr: 1µA @ 400V
    • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • PMEG4015EPK - 40 V, 1.5 A LOW VF
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: 2-XDFN
    • Supplier Device Package: DFN1608D-2
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Current - Average Rectified (Io): 1.5A
    • Voltage - Forward (Vf) (Max) @ If: 610mV @ 1.5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 5µA @ 10V
    • Capacitance @ Vr, F: 90pF @ 1V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • DIODE AVALANCHE 800V 1.5A MELF
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SOD-87
    • Supplier Device Package: MELF
    • Diode Type: Avalanche
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 1.5A
    • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 3µs
    • Current - Reverse Leakage @ Vr: 1µA @ 800V
    • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • DIODE AVALANCHE 200V 1.5A MELF
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SOD-87
    • Supplier Device Package: MELF
    • Diode Type: Avalanche
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 1.5A
    • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 3µs
    • Current - Reverse Leakage @ Vr: 1µA @ 200V
    • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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