- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BAV70SRA147 | NEXPERIA BAV70 - HIGH-SPEED SWI | NXP USA Inc. | 6-XFDFN Exposed Pad | Standard | Surface Mount | DFN1412-6 | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 80V | 1.25V @ 150mA | 100V | 4ns | 150°C (Max) | 2 Pair Common Cathode | 355mA (DC) | Automotive, AEC-Q101 | ||
PMEG3010BEA/ZLF | DIODE SCHOTTKY SOD323 | NXP USA Inc. | |||||||||||||||
PMEG6010ESBYL | RECTIFIER DIODE, SCHOTTKY, 60V | NXP USA Inc. | 2-XDFN | 1A | Schottky | Surface Mount | DSN1006-2 | Fast Recovery =< 500ns, > 200mA (Io) | 30µA @ 60V | 20pF @ 10V, 1MHz | 730mV @ 1A | 60V | 2.4ns | 150°C (Max) | |||
BAV99W/DG/B2115 | RECTIFIER DIODE | NXP USA Inc. | SC-70, SOT-323 | Standard | Surface Mount | SOT-323 | Small Signal =< 200mA (Io), Any Speed | 500nA @ 80V | 1.25V @ 150mA | 100V | 4ns | 150°C (Max) | 1 Pair Series Connection | 150mA (DC) | Automotive, AEC-Q101 | ||
PMEG050V150EPD139 | RECTIFIER DIODE, SCHOTTKY | NXP USA Inc. | |||||||||||||||
PMEG2015EPK,315 | NOW NEXPERIA PMEG2015EPK - RECTI | NXP USA Inc. | 2-XDFN | 1.5A | Schottky | Surface Mount | DFN1608D-2 | Fast Recovery =< 500ns, > 200mA (Io) | 350µA @ 10V | 120pF @ 1V, 1MHz | 420mV @ 1.5A | 20V | 5ns | 150°C (Max) | |||
1PS66SB82115 | NOW NEXPERIA 1PS66SB82 - MIXER D | NXP USA Inc. | |||||||||||||||
BAS216,115 | DIODE GEN PURP 75V 250MA SOD2 | NXP USA Inc. | SOD-110 | 250mA (DC) | Standard | Surface Mount | SOD-110 | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 75V | 1.5pF @ 0V, 1MHz | 1.25V @ 150mA | 75V | 4ns | 150°C (Max) | |||
BYC8DX-600,127 | NOW WEEN - BYC8DX-600 - HYPERFAS | NXP USA Inc. | TO-220-2 Full Pack | 8A | Standard | Through Hole | TO-220F | Fast Recovery =< 500ns, > 200mA (Io) | 40µA @ 600V | 2.9V @ 8A | 600V | 20ns | 150°C (Max) | ||||
BAW156235 | LOW-LEAKAGE DOUBLE DIODE | NXP USA Inc. | |||||||||||||||
PMEG3005EL/S500315 | RECTIFIER DIODE, SCHOTTKY | NXP USA Inc. | |||||||||||||||
BY359-1500,127 | DIODE GEN PURP 1.5KV 10A TO220AC | NXP USA Inc. | TO-220-2 | 10A (DC) | Standard | Through Hole | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | 100µA @ 1300V | 1.8V @ 20A | 1500V | 600ns | 150°C (Max) | ||||
1PS79SB31,115 | RECTIFIER DIODE, SCHOTTKY, 0.2A, | NXP USA Inc. | SC-79, SOD-523 | 200mA (DC) | Schottky | Surface Mount | SOD-523 | Small Signal =< 200mA (Io), Any Speed | 30µA @ 10V | 25pF @ 1V, 1MHz | 500mV @ 200mA | 30V | 125°C (Max) | ||||
PMEG3010ESB314 | RECTIFIER DIODE, SCHOTTKY | NXP USA Inc. | |||||||||||||||
BYV29F-600,127 | NOW WEEN - BYV29F-600 - ULTRAFAS | NXP USA Inc. | TO-220-2 | 9A | Standard | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 1.9V @ 8A | 600V | 35ns | 150°C (Max) |
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