- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5nA @ 75V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 215mA (DC)
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- Manufacturer: NXP USA Inc.
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 215mA (DC)
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Operating Temperature - Junction: 125°C (Max)
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
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- Manufacturer: NXP USA Inc.
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- Manufacturer: NXP USA Inc.
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- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: TO-220F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 4.5mA @ 100V
- Operating Temperature - Junction: 175°C (Max)
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 10A
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- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 135ns
- Current - Reverse Leakage @ Vr: 400µA @ 600V
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SOD-87
- Supplier Device Package: MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Operating Temperature - Junction: -65°C ~ 175°C
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- Manufacturer: NXP USA Inc.
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- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: ALF2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Operating Temperature - Junction: 200°C (Max)
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- Manufacturer: NXP USA Inc.
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- Manufacturer: NXP USA Inc.
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- Manufacturer: NXP USA Inc.
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- 100