- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1PS76SB21145 | NOW NEXPERIA 1PS76SB21 - RECTIFI | NXP USA Inc. | |||||||||||||||
| BAV170235 | RECTIFIER DIODE, 2 ELEMENT, 0.21 | NXP USA Inc. | |||||||||||||||
| BAS21PG115 | BAS21PG - RECTIFIER DIODE | NXP USA Inc. | |||||||||||||||
| BAW56W/DG/B2115 | RECTIFIER DIODE | NXP USA Inc. | |||||||||||||||
| 1PS193,135 | DIODE GEN PURP 80V 215MA SMT3 | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | 215mA (DC) | Standard | Surface Mount | SMT3; MPAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 80V | 1.5pF @ 0V, 1MHz | 1.2V @ 100mA | 80V | 4ns | 150°C (Max) | |||
| BAV199/ZLR | DIODE ARRAY GEN PURP 75V SOT23 | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | Standard | Surface Mount | SOT-23 (TO-236AB) | Small Signal =< 200mA (Io), Any Speed | 5nA @ 75V | 1.25V @ 150mA | 75V | 3µs | 150°C (Max) | 1 Pair Series Connection | 160mA (DC) | |||
| BYV29FD-600,118 | NOW WEEN - BYV29FD-600 - ULTRAFA | NXP USA Inc. | TO-252-3, DPak (2 Leads + Tab), SC-63 | 9A | Standard | Surface Mount | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 1.9V @ 8A | 600V | 35ns | 150°C (Max) | ||||
| BAS70,235 | NOW NEXPERIA BAS70 - RECTIFIER D | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | 70mA (DC) | Schottky | Surface Mount | SOT-23 | Small Signal =< 200mA (Io), Any Speed | 10µA @ 70V | 2pF @ 0V, 1MHz | 1V @ 15mA | 70V | 150°C (Max) | ||||
| BAS316/DG/B4115 | BAS316 - RECTIFIER DIODE | NXP USA Inc. | |||||||||||||||
| BY229-600,127 | DIODE GEN PURP 500V 8A TO220AC | NXP USA Inc. | TO-220-2 | 8A | Standard | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 400µA @ 500V | 1.85V @ 20A | 500V | 135ns | 150°C (Max) | ||||
| BAT54J | BAT54J - SCHOTTKY BARRIER SINGLE | NXP USA Inc. | |||||||||||||||
| PMEG2005EGW,115 | PMEG2005 - 20V, 0.5 A LOW VF MEG | NXP USA Inc. | |||||||||||||||
| BAV199,215 | RECTIFIER DIODE, 2 ELEMENT, 0.16 | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | Standard | Surface Mount | SOT-23 | Small Signal =< 200mA (Io), Any Speed | 5nA @ 75V | 1.25V @ 150mA | 75V | 3µs | 150°C (Max) | 1 Pair Series Connection | 160mA (DC) | |||
| PMEG2005EGW118 | RECTIFIER DIODE, SCHOTTKY | NXP USA Inc. | |||||||||||||||
| PMEG2010EPASX | NOW NEXPERIA PMEG2010EPASX - REC | NXP USA Inc. | 3-UDFN Exposed Pad | 1A | Schottky | Surface Mount | DFN2020D-3 | Fast Recovery =< 500ns, > 200mA (Io) | 335 µA @ 20 V | 175pF @ 1V, 1MHz | 375mV @ 1A | 20V | 50ns | 150°C (Max) | Automotive, AEC-Q101 |
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