Semiconductors, Diodes, Diodes - Rectifiers - Arrays NXP Semiconductors

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Found: 73

BAV99/8,235

NEXPERIA BAV99 - DUAL HIGH-SPEED

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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BAT54W,115

NEXPERIA BAT54W - RECTIFIER DIOD

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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BAW56W,135

NEXPERIA BAW56 - HIGH-SPEED SWIT

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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BAS16,215

NEXPERIA BAS16 - RECTIFIER DIODE

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Series: Automotive, AEC-Q101, BAS16
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG3020CEP,115

NEXPERIA PMEG3020CEP - RECTIFIER

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128/CFP5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 420mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1.5mA @ 30V
- Capacitance @ Vr, F: 170pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG1020EV,115

NEXPERIA PMEG1020EV - RECTIFIER

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 460mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 10V
- Capacitance @ Vr, F: 45pF @ 5V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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BYV32E-200,127

NOW WEEN - BYV32E-200 - ULTRAFAS

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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BAS28,215

NEXPERIA BAS28 - RECTIFIER DIODE

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 215mA (DC)
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BAT54VV,115

NEXPERIA BAT54VV - RECTIFIER DIO

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PMEG045V050EPDAZ

NEXPERIA PMEG045V050EPD - 45 V,

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: CFP15
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 490mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12ns
- Current - Reverse Leakage @ Vr: 300µA @ 45V
- Capacitance @ Vr, F: 580pF @ 1V, 1MHz
- Operating Temperature - Junction: 175°C (Max)
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PMEG2015EH,115

NEXPERIA PMEG2015EH - RECTIFIER

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 660mV @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 70µA @ 20V
- Capacitance @ Vr, F: 50pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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MMBD4148,215

NEXPERIA MMBD4148 - RECTIFIER DI

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 75V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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PMEG6010ESBYL

NEXPERIA PMEG6010ES - RECTIFIER

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 730mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.4ns
- Current - Reverse Leakage @ Vr: 30µA @ 60V
- Capacitance @ Vr, F: 20pF @ 10V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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BAV170,215

NEXPERIA BAV170 - RECTIFIER DIOD

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PMEG45U10EPDAZ

NEXPERIA PMEG45U10EPD - 45V, 10A

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: CFP15
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 490mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 16ns
- Current - Reverse Leakage @ Vr: 20mA @ 10V
- Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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