-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: Nexperia USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128/CFP5
- Diode Type: SiGe (Silicon Germanium)
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 11ns
- Current - Reverse Leakage @ Vr: 30 nA @ 120 V
- Capacitance @ Vr, F: 103pF @ 1V, 1MHz
- Operating Temperature - Junction: 175°C (Max)
-
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 40V
- Capacitance @ Vr, F: 250pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
-
- Manufacturer: Nexperia USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128/CFP5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 360mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5mA @ 30V
- Capacitance @ Vr, F: 470pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C
-
- Manufacturer: Nexperia USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12.5ns
- Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
- Capacitance @ Vr, F: 310pF @ 1V, 1MHz
- Operating Temperature - Junction: 175°C
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